ATF-10100 fet equivalent, 0.5-12 ghz low noise gallium arsenide fet.
* Low Noise Figure: 0.5 dB Typical at 4 GHz
* Low Bias: VDS =2V,IDS␣ =␣ 25mA
* High Associated Gain: 14.0 dB Typical at 4 GHz
* High Output Power: 21.0 dB.
The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency .
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