ATF-10136
ATF-10136 is 0.5-12 GHz Low Noise Gallium Arsenide FET manufactured by Agilent Technologies.
Features
- Low Noise Figure: 0.5 d B Typical at 4 GHz
- Low Bias: VDS = 2 V, IDS = 20 m A
- High Associated Gain: 13.0 d B Typical at 4 GHz
- High Output Power: 20.0 d Bm Typical P1 d B at 4 GHz
- Cost Effective Ceramic Microstrip Package
- Tape-and Reel Packaging Option Available [1]
Description
The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.
This Ga As FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
36 micro-X Package
Electrical Specifications, TA = 25°C
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