ATF-10136 Datasheet 0.5-12 GHz Low Noise Gallium Arsenide FET

Manufacturer: Agilent Technologies

Overview: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136.

ATF-10136 0.5-12 ghz low noise gallium arsenide fet by Agilent Technologies - Datasheet Preview

Datasheet Details

Part number	ATF-10136
Manufacturer	Agilent Technologies
File Size	35.82 KB
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
Download	ATF-10136 Download (PDF)

General Description

The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package.

Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers.

Key Features

Low Noise Figure: 0.5 dB Typical at 4 GHz.
Low Bias: VDS = 2 V, IDS = 20 mA.
High Associated Gain: 13.0 dB Typical at 4 GHz.
High Output Power: 20.0 dBm Typical P1 dB at 4 GHz.
Cost Effective Ceramic Microstrip Package.
Tape-and Reel Packaging Option Available [1].

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