ATF-21170 fet equivalent, 0.5-6 ghz low noise gallium arsenide fet.
* Low Noise Figure: 0.9 dB Typical at 4 GHz
* High Associated Gain: 13.0 dB Typical at 4 GHz
* High Output Power: 23.0 dBm Typical P1 dB at 4 GHz
* Hermet.
in the 0.5-6 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery .
The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz fr.
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