GSMDEW2206 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1.8V Gate Drive Applications
* G-S ESD protection diode emb.

Application

Features
* 20V, 10A, RDS(ON)=8.5mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1..

Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.

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