GSMDC0956Z mosfet equivalent, 100v n-channel mosfet.
* 100V, 10A, RDS(ON)=115mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* DFN3X3-8L package.
Features
* 100V, 10A, RDS(ON)=115mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS gu.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
TAGS
Download