GSMDEC2210V mosfet equivalent, dual n-channel mosfet.
* 20V, 30A, RDS(ON)=12mΩ@VGS=10V
* Improved dv/dt capability
* ESD Protection Diode Embedded
* 100% EAS guaranteed
* Green Device Available
* DFN3.
Features
* 20V, 30A, RDS(ON)=12mΩ@VGS=10V
* Improved dv/dt capability
* ESD Protection Diode Embedded
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These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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