* 200V, 18A, RDS(ON)=140mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* VGS Guaranteed ±25V
* Green Device Available
* TO-252-2L package.

Features
* 200V, 18A, RDS(ON)=140mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* VGS Guarant.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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