GSMDB2116S mosfet equivalent, n+p dual-channel mosfet.
* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast switching
* Suit for -1.8V/1.8V Gate Drive Applications .
Features
* N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
* P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V
* Fast.
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.
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+P
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