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MW6IC2015NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW6IC2015NBR1 datasheet PDF. This datasheet also covers the MW6IC2015GNBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

2.2 μF Chip Capacitors 5.6 pF Chip Capacitors 10 μF Chip Capacitors 1 pF Chip Capacitor 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.1 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistor 18 Ω, 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B5R6CT500XT C5750X5R1H106MT ATC100B

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW6IC2015GNBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW6IC2015GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2420NBR1 RF LDMOS Integrated Power Amplifier
MW6S004NT1 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA.
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