MRF6S19200HR3 - RF Power Transistors

Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF6S19200HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	443.02 KB
Description	RF Power Transistors
Datasheet	MRF6S19200HR3 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev.

0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

Key Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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