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LP750 - 0.5 W POWER PHEMT

Description

AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate.

Features

  • S.
  • 28 dBm Output Power at 1-dB Compression at 18 GHz.
  • 10 dB Power Gain at 18 GHz.
  • 24 dBm Output Power at 1-dB Compression at 3.3V.
  • 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750.

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Datasheet Details

Part number LP750
Manufacturer Filtronic Compound Semiconductors
File Size 34.36 KB
Description 0.5 W POWER PHEMT
Datasheet download datasheet LP750 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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0.5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD LP750 • DESCRIPTION AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications.
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