LP7612 - HIGH DYNAMIC RANGE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP7612
Manufacturer	Filtronic Compound Semiconductors
File Size	39.36 KB
Description	HIGH DYNAMIC RANGE PHEMT
Datasheet	LP7612 Datasheet
Additional preview pages of the LP7612 datasheet.

Product details

Description

AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimized for high dynamic range.The LP7612 also

Features

S.
21 dBm Output Power at 1-dB Compression at 18 GHz.
9.5 dB Power Gain at 18 GHz.
1.0 dB Noise Figure at 18 GHz.
55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE.

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Other Datasheets by Filtronic Compound Semiconductors

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Published: Mar 22, 2005 |