LP7512 - ULTRA LOW NOISE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP7512
Manufacturer	Filtronic Compound Semiconductors
File Size	36.64 KB
Description	ULTRA LOW NOISE PHEMT
Datasheet	LP7512 Datasheet
Additional preview pages of the LP7512 datasheet.

Product details

Description

AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
0.6 dB Noise Figure at 12 GHz.
12 dB Associated Gain at 12 GHz.
Low DC Power Consumption.
Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE.

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Other Datasheets by Filtronic Compound Semiconductors

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Published: Mar 22, 2005 |