LP750P100 - PACKAGED 0.5 WATT POWER PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP750P100
Manufacturer	Filtronic Compound Semiconductors
File Size	49.27 KB
Description	PACKAGED 0.5 WATT POWER PHEMT
Datasheet	LP750P100 Datasheet
Additional preview pages of the LP750P100 datasheet.

Product details

Description

AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate.

Features

S.
41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency.

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Published: Mar 22, 2005 |