LP7512P70 - PACKAGED ULTRA LOW NOISE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP7512P70
Manufacturer	Filtronic Compound Semiconductors
File Size	59.88 KB
Description	PACKAGED ULTRA LOW NOISE PHEMT
Datasheet	LP7512P70 Datasheet
Additional preview pages of the LP7512P70 datasheet.

Product details

Description

AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.

Features

S.
0.7 dB Noise Figure at 12 GHz.
12 dB Associated Gain at 12 GHz.
0.4 dB Noise Figure at 2 GHz.
18 dB Associated Gain at 2 GHz.
Low DC Power Consumption: 30mW LP7512P70.

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Other Datasheets by Filtronic Compound Semiconductors

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Published: Mar 22, 2005 |