* Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
* High performance trench technologh for extremely low rDS(on.

* Primary Switch in isolated DC-DC
* Synchronous Rectifier
* Load Switch D D D D SO-8 Pin 1 G S S S D5.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.

FDS86106

FDS86140

FDS86141

FDS86240

FDS86242

FDS86252

FDS8638

FDS8670

FDS8672S

FDS8690

FDS8333C

FDS8433A

FDS8447

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