FDMS8670 mosfet equivalent, n-channel power trench mosfet.
General Description
* Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A
* Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A
* 100% UIL Tested
* RoHS Compliant
This .
* Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A
* Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A
* 100% UIL Tested
* RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process.
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