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FDMS8672S - N-Channel PowerTrench SyncFET

General Description

Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm T

Key Features

  • General.

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FDMS8672S N-Channel PowerTrench® SyncFETTM February 2007 FDMS8672S N-Channel PowerTrench® SyncFETTM 30V, 35A, 5mΩ Features General Description „ Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A „ Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant tm The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.