FDMS86263P datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
* Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
* Very low Rds-on in Mid-Voltage P-Channel silicon technology.

Application

as well as load switch applications
* 100% UIL tested
* RoHS Compliant October 2014 General Description This P-.

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications <.

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