FDMS86263P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A
* Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A
* Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology.
as Well
as Load Switch Applications
* 100% Uil Tested
* This Device is Pb−Free and is RoHS Compliant
Application.
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
* Max rDS(on) = 53 .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 409.08KB)