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FDMS86263P Datasheet P-Channel MOSFET

Manufacturer: onsemi

General Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology.

This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.

Overview

MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General.

Key Features

  • Max rDS(on) = 53 mW at VGS =.
  • 10 V, ID =.
  • 4.4 A.
  • Max rDS(on) = 64 mW at VGS =.
  • 6 V, ID =.
  • 4 A.
  • Very Low Rds.
  • on in Mid.
  • Voltage P.
  • Channel Silicon Technology Optimized for Low Qg.
  • This Product is Optimised for Fast Switching.