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FDMS86263P - P-Channel MOSFET

Description

This P

POWERTRENCH technology.

state resistance and optimized for superior switching performance.

Features

  • Max rDS(on) = 53 mW at VGS =.
  • 10 V, ID =.
  • 4.4 A.
  • Max rDS(on) = 64 mW at VGS =.
  • 6 V, ID =.
  • 4 A.
  • Very Low Rds.
  • on in Mid.
  • Voltage P.
  • Channel Silicon Technology Optimized for Low Qg.
  • This Product is Optimised for Fast Switching.

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Datasheet preview – FDMS86263P

Datasheet Details

Part number FDMS86263P
Manufacturer ON Semiconductor
File Size 409.08 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMS86263P Datasheet
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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -150 V, -22 A, 53 mW FDMS86263P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A • Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A • Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg • This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% Uil Tested • This Device is Pb−Free and is RoHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET www.onsemi.
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