FDMS86263P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
FDMS86263P Key Features
- Max rDS(on) = 53 mW at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 64 mW at VGS = -6 V, ID = -4 A
- Very Low Rds-on in Mid-Voltage P-Channel Silicon Technology
- This Product is Optimised for Fast Switching