FDMS86200 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
* Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
* Advanced Package and Silicon combination for low rDS(on) and .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC-DC Conversio.
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