Datasheet Summary
FDMS86200 N-Channel Power Trench® MOSFET
November 2012
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
- Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
- Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- DC-DC Conversion
Top
Bottom Pin 1 S S S S G S S D D D G D D D D
Power...
