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FDMS86200 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D

Key Features

  • Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A.
  • Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A „ Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.