* Extended TJ rating to 175°C * Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A * Max rDS(on) = 10.3 mΩ at VGS = 6 V, I.
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
Download