FDMS86202ET120 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
* Max rDS(on) = 10.3 mΩ at VGS = 6 V, I.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. A.

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