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FDMS8622 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

POE Protection Switch DC-DC Switch Top Bottom Pin

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
  • Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • Termination is Lead-free and RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.5 A, 56 m Features  Shielded Gate MOSFET Technology  Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A  Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A  High performance trench technology for extremely low rDS(on)  High power and current handling capability in a widely used surface mount package  100% UIL Tested  Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.