* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
* Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID .

* OringFET / Load Switching
* Synchronous rectification
* DC-DC Conversion Top Pin 1 Bottom S Pin 1 S S G .

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. A.

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