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FDMS86252 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicond

Key Features

  • General.

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FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86252 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A „ Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.