FDMS86252 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
* Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
* A.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
* Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
* Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is.

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