Datasheet4U Logo Datasheet4U.com

FDMS86255ET150 - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

OringFET / Load Switching

Key Features

  • Extended TJ rating to 175°C.
  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant General.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMS86255 MOSFET
FDMS86250 N-Channel MOSFET
FDMS86252 N-Channel MOSFET
FDMS86200 N-Channel MOSFET
FDMS86200DC MOSFET
FDMS86201 N-Channel MOSFET
FDMS86202 MOSFET
FDMS86202ET120 MOSFET
FDMS8622 N-Channel MOSFET
FDMS86263P MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 63 A, 12.4 mΩ Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A „ Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.