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FDMS8622 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

POE Protection Switch DC-DC Switch Top Bottom Pin

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
  • Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • Termination is Lead-free and RoHS Compliant General.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMS86200 N-Channel MOSFET
FDMS86200DC MOSFET
FDMS86201 N-Channel MOSFET
FDMS86202 MOSFET
FDMS86202ET120 MOSFET
FDMS86250 N-Channel MOSFET
FDMS86252 N-Channel MOSFET
FDMS86255 MOSFET
FDMS86255ET150 MOSFET
FDMS86263P MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.5 A, 56 m Features  Shielded Gate MOSFET Technology  Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A  Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A  High performance trench technology for extremely low rDS(on)  High power and current handling capability in a widely used surface mount package  100% UIL Tested  Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.