FDMS86255 Datasheet, ON Semiconductor

* Shielded Gate MOSFET Technology
* Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
* Advanced Package and S.

* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion Pin 1 Pin 1 SSS G DDD D Top .

This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shield.