FDMS86255 Datasheet ON Semiconductor

Features and Benefits

• Shielded Gate MOSFET Technology
• Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
• Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
• Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
• Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
• MSL1 Robus.