FDMS86255
Description
This N-Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology.
Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
- Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
- Advanced Package and Silicon bination for Low RDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- MSL1 Robust Package Design
- 100% UIL Tested
- These Device is Halogen Free
