FDMS86255 mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A
* Advanced Package and S.
* OringFET / Load Switching
* Synchronous Rectification
* DC−DC Conversion
Pin 1
Pin 1 SSS G
DDD D
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This N−Channel MOSFET is produced using onsemi advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
* Shield.
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