FDME510PZT datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A
* Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A
* Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A
* Max r.

Application

It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal perform.

Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal perf.

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