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FDME510PZT - MOSFET

Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

Features

  • Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A.
  • Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A.
  • Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A.
  • Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A.
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
  • Free from halogenated compounds and antimony oxides.
  • HBM ESD protection level > 2400V (Note3).
  • RoHS Compliant October 2013 General.

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FDME510PZT P-Channel PowerTrench® MOSFET FDME510PZT P-Channel PowerTrench® MOSFET -20 V, -6 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A „ Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A „ Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A „ Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A „ Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protection level > 2400V (Note3) „ RoHS Compliant October 2013 General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.