FDME1023PZT mosfet equivalent, dual p-channel powertrench mosfet.
* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
* Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
* Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A
It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connecte.
This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduct.
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