FDME1024NZT mosfet equivalent, dual n-channel power trench mosfet.
* Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
* Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
* Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
* Max .
It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET .
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conducti.
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