FDME430NT datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
* Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
* Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID =.

Application

* Li-lon Battery Pack
* Baseband Switch
* Load Switch
* DC-DC Conversion G D Pin 1 D S S D D DD DD G.

Description

* Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
* Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
* Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
* Free from halo.

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