* Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
* Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
* Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
* Low p.

It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin pac.

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin .

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