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FDMC3020DC - N-Channel Dual Cool PowerTrench MOSFET

Description

Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS Compliant This N-Channel MOSFET is produced using Fai

Features

  • General.

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FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET FDMC3020DC N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 40 A, 6.25 mΩ July 2012 Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 6.25 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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