FDMC3612 Datasheet Text
FDMC3612 N-Channel PowerTrench® MOSFET
FDMC3612
N-Channel Power Trench® MOSFET
100 V, 12 A, 110 mΩ
February 2012
Features
General Description
- Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
- Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications
- DC
- DC Conversion
- PSE Switch
Top
8765
Bottom
DDD D
1 234
GS S S
MLP 3.3x3.3
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID...
