FDD86113LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
* Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
* Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
* HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced .

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