FDD86102LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
* H.

Application

* DC - DC Conversion
* Inverter
* Synchronous Rectifier D D G S DTO-P-2A5K2 (TO-252) G S MOSFET Maximum .

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
* HBM ESD protection level > 6 kV typical (Note 4)
* Very low Qg and Qgd compared to competing trenc.

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