Datasheet4U Logo Datasheet4U.com

FDD86102LZ - N-Channel MOSFET

Datasheet Summary

Features

  • Static drain-source on-resistance: RDS(on)≤22.5mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – FDD86102LZ

Datasheet Details

Part number FDD86102LZ
Manufacturer INCHANGE
File Size 264.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD86102LZ Datasheet
Additional preview pages of the FDD86102LZ datasheet.

📁 Similar Datasheet

  • FDD86102LZ - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86102 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86110 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86113LZ - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86069-F085 - N-Channel Power MOSFET (ON Semiconductor)
  • FDD86250 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86250_F085 - 150V 50A N-Channel MOSFET (ON Semiconductor)
  • FDD86252 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86326 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD86367 - 80V 100A N-Channel MOSFET (ON Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 54 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.3 UNIT ℃/W isc website：www.iscsemi.
Published: |