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FDD86102LZ - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤22.5mΩ.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC-DC Conversion ·Inverters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 54 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 2.3 UNIT ℃/W isc website：www.iscsemi.