FDD86110 Description
Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDD86110 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
- Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
- 100% UIL tested
- RoHS pliant
- DC Conversion
- 55 to +150