Datasheet Details
| Part number | FDD86110 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 396.74 KB |
| Description | N-Channel MOSFET |
| Download | FDD86110 Download (PDF) |
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| Part number | FDD86110 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 396.74 KB |
| Description | N-Channel MOSFET |
| Download | FDD86110 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
RoHS Compliant Application DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 100 ±20 50 12.5 150 135 127 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.98 (Note 1a) 40 °C/W Device Marking FDD86110 Device FDD86110 Package D-PAK(TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation 1 FDD86110 Rev.1.2 www.fairchildsemi.com FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V 100 ID = 250 μA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Chara
FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86110 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 50 A, 10.
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