FDD86110 datasheet, mosfet equivalent, Fairchild Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 396.74KB)

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
* 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTr.

Image gallery