FDD86250 Datasheet, Fairchild Semiconductor

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
* 100.

* Shielded Gate MOSFET Technology
* Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
* 100% UIL tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s .