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FDD86250 - N-Channel MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process

Features

  • General.

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Datasheet Details

Part number FDD86250
Manufacturer Fairchild Semiconductor
File Size 492.26 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD86250 Datasheet
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Full PDF Text Transcription

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FDD86250 N-Channel Shielded Gate PowerTrench® MOSFET FDD86250 April 2015 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 51 A, 22 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
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