FDC8886 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology fo.

Description

* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed
* RoHS Compliant This N-Channel MOSFET is pro.

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