FDC637BNZ mosfet equivalent, mosfet.
General Description
September 2007
tm
* Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
* Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
* Fast switching speed
September 2007
tm
* Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A
* Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A
* Fast switching speed
* Low gate charge (8nC typical)
* High performance trench technology for extremely low rDS(on) .
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