FDC6302P mosfet equivalent, dual p-channel mosfet.
-25 V, -0.12 A continuous, -0.5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V.
as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one .
These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. Th.
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