FDC637AN Description
Features This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very...
FDC637AN Key Features
- 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
- Fast switching speed