FDC637AN - N-Channel MOSFET

ON Semiconductor

Datasheet Details

This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V.
Fast switching speed. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 pack.

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Published: Dec 12, 2021 |