FDC637AN - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC637AN
Manufacturer	Fairchild Semiconductor
File Size	240.68 KB
Description	N-Channel MOSFET
Datasheet	FDC637AN Datasheet
Additional preview pages of the FDC637AN datasheet.

Product details

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V.
Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

📁 Similar Datasheet

FDC637AN - N-Channel MOSFET (ON Semiconductor)
FDC6301N - Dual N-Channel Digital FET (ON Semiconductor)
FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6303N - Dual N-Channel Digital FET (onsemi)
FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)
FDC6306P - P-Channel MOSFET (onsemi)

Other Datasheets by Fairchild Semiconductor

FDC637BNZ - MOSFET
FDC6301N - Dual N-Channel / Digital FET
FDC6302P - Digital FET/ Dual P-Channel
FDC6303N - Dual N-Channel Digital FET
FDC6304P - Digital FET/ Dual P-Channel
FDC6305N - Dual N-Channel MOSFET

Published: Mar 30, 2005 |