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FDC637AN Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Overview

FDC637AN November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM.

Key Features

  • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V.
  • Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).