FDC637AN Datasheet | Fairchild Semiconductor

November 1999 Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint pared with bigger SO-8 and TSSOP-8 packages. Features - 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V - - - - Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for...