FNK85N06D mosfet equivalent, n-channel power mosfet.
* VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
FNK85N06D
General Features
* VDS =85V,ID =100A RDS(ON) < 7.1mΩ @ VGS=10V
(Typ:5.8mΩ)
* High density cell de.
The FNK85N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
FNK85N06D
General Features
* VDS =85V,ID =100A .
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