* VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage a.

FNK8819B General Features
* VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
* High densit.

The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK8819B General Features
* VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ .

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