FNK80N08K mosfet equivalent, n-channel power mosfet.
* VDS = 80V,ID =70A RDS(ON) < 11.5m Ω @ VGS=10V
(Typ:9.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curre.
General Features
* VDS = 80V,ID =70A RDS(ON) < 11.5m Ω @ VGS=10V
(Typ:9.5mΩ)
* High density cell design for .
The FNK80N08K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 80V,ID =70A RDS(ON) < 11.5m Ω @ VGS=10V
(Typ:9.5mΩ)
* Hi.
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