FNK80H11 mosfet equivalent, n-channel power mosfet.
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
FNK80H11
General Features
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
* High density cell desig.
The FNK 80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK80H11
General Features
* VDS =80V,ID =105A RDS(ON) < 8mΩ @ VGS=10V
(Typ:6.3mΩ)
Image gallery
TAGS
Download (Size : 779.57KB)